MB85RS2MTAPH-G-JNE2 vs MB85RS1MTPH-G-JNE1

This detailed comparison of MB85RS2MTAPH-G-JNE2 and MB85RS1MTPH-G-JNE1 in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.

MB85RS2MTAPH-G-JNE2

Fujitsu Electronics America, Inc.

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MB85RS1MTPH-G-JNE1

Fujitsu Electronics America, Inc.

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Specifications Hide identical items

Manufacturer	Fujitsu Electronics America, Inc.	Fujitsu Electronics America, Inc.
Package / Case	8-DIP (0.300", 7.62mm)	8-DIP (0.300", 7.62mm)
Description	IC FRAM 2MBIT SPI 40MHZ 8DIP	IC FRAM 1MBIT SPI 40MHZ 8DIP
In Stock	199	122
Mounting Type	Through Hole	Through Hole
Part Status	Not For New Designs	Not For New Designs
Series	-	-
Package	Tray	Tube
Memory Type	Non-Volatile	Non-Volatile
Memory Format	FRAM	FRAM
Technology	FRAM (Ferroelectric RAM)	FRAM (Ferroelectric RAM)
Memory Size	2Mb (256K x 8)	1Mb (128K x 8)
Memory Interface	SPI	SPI
Clock Frequency	40 MHz	40 MHz
Write Cycle Time - Word, Page	-	-
Access Time	-	-
Voltage - Supply	1.8V ~ 3.6V	1.8V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)	-40°C ~ 85°C (TA)
Supplier Device Package	8-DIP	8-DIP