MB85RS2MTAPH-G-JNE2 vs MB85RS2MTPH-G-JNE1

This detailed comparison of MB85RS2MTAPH-G-JNE2 and MB85RS2MTPH-G-JNE1 in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.

MB85RS2MTAPH-G-JNE2

Fujitsu Electronics America, Inc.

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MB85RS2MTPH-G-JNE1

Fujitsu Electronics America, Inc.

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Specifications Hide identical items

Manufacturer	Fujitsu Electronics America, Inc.	Fujitsu Electronics America, Inc.
Package / Case	8-DIP (0.300", 7.62mm)	8-DIP (0.300", 7.62mm)
Description	IC FRAM 2MBIT SPI 40MHZ 8DIP	IC FRAM 2MBIT SPI 25MHZ 8DIP
In Stock	199	1 986
Mounting Type	Through Hole	Through Hole
Part Status	Not For New Designs	Not For New Designs
Series	-	-
Package	Tray	Tube
Memory Type	Non-Volatile	Non-Volatile
Memory Format	FRAM	FRAM
Technology	FRAM (Ferroelectric RAM)	FRAM (Ferroelectric RAM)
Memory Size	2Mb (256K x 8)	2Mb (256K x 8)
Memory Interface	SPI	SPI
Clock Frequency	40 MHz	25 MHz
Write Cycle Time - Word, Page	-	-
Access Time	-	-
Voltage - Supply	1.8V ~ 3.6V	1.8V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)	-40°C ~ 85°C (TA)
Supplier Device Package	8-DIP	8-DIP