MB85RS2MTAPH-G-JNE2 vs MR45V200BRAZAARL

This detailed comparison of MB85RS2MTAPH-G-JNE2 and MR45V200BRAZAARL in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.

MB85RS2MTAPH-G-JNE2

Fujitsu Electronics America, Inc.

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MR45V200BRAZAARL

ROHM Semiconductor

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Specifications Hide identical items

Manufacturer	Fujitsu Electronics America, Inc.	ROHM Semiconductor
Package / Case	8-DIP (0.300", 7.62mm)	8-DIP (0.300", 7.62mm)
Description	IC FRAM 2MBIT SPI 40MHZ 8DIP	IC FRAM 2MBIT SPI 34MHZ 8DIP
In Stock	199	516
Mounting Type	Through Hole	Through Hole
Part Status	Not For New Designs	Active
Series	-	-
Package	Tray	Tube
Memory Type	Non-Volatile	Non-Volatile
Memory Format	FRAM	FRAM
Technology	FRAM (Ferroelectric RAM)	FRAM (Ferroelectric RAM)
Memory Size	2Mb (256K x 8)	2Mb (256K x 8)
Memory Interface	SPI	SPI
Clock Frequency	40 MHz	34 MHz
Write Cycle Time - Word, Page	-	-
Access Time	-	-
Voltage - Supply	1.8V ~ 3.6V	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)	-40°C ~ 85°C (TA)
Supplier Device Package	8-DIP	8-DIP