BSM180C12P2E202

Part No :: BSM180C12P2E202

Manufacturer: ROHM Semiconductor

VIGOR # :: 2903045

Description: SICFET N-CH 1200V 204A MODULE

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: BSM180C12P2E202 PDF

Country of origin: -

Date code: -

BSM180C12P2E202 Specifications

Type	Description
Series:	-
Package:	Tray
Part Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	204A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	-
Vgs(th) (Max) @ Id:	4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds:	20000 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	1360W (Tc)
Operating Temperature:	175°C (TJ)
Mounting Type:	Chassis Mount
Supplier Device Package:	Module
Package / Case:	Module

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In Stock: 4

Shipped from

HK warehouse

Expected Shipping Date

Feb 03 - Feb 07 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$600.00~~	~~$600.00~~

Current price of BSM180C12P2E202 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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Pricing(USD)